NDF10N60Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NDF10N60Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 36 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 30 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 47 nC
Tiempo de subida (tr): 31 nS
Conductancia de drenaje-sustrato (Cd): 150 pF
Resistencia entre drenaje y fuente RDS(on): 0.75 Ohm
Paquete / Cubierta: TO220FP
Búsqueda de reemplazo de MOSFET NDF10N60Z
NDF10N60Z Datasheet (PDF)
ndf10n60z ndp10n60z.pdf
NDF10N60Z, NDP10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 ACompliant600 V0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP U
ndf10n60z.pdf
NDF10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS650 V0.75 WCompliantABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-Channel
ndf10n62z ndp10n62z.pdf
NDF10N62Z, NDP10N62ZN-Channel Power MOSFET620 V, 0.65 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 5 A These Devices are Pb-Free and RoHS Compliant620 V0.65 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF10N62Z NDP10N62Z UnitN-Channel
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