NDF10N60Z Todos los transistores

 

NDF10N60Z MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NDF10N60Z

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.75 Ohm

Encapsulados: TO220FP

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NDF10N60Z datasheet

 ..1. Size:108K  onsemi
ndf10n60z ndp10n60z.pdf pdf_icon

NDF10N60Z

NDF10N60Z, NDP10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features Low ON Resistance Low Gate Charge http //onsemi.com Zener Diode-protected Gate 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 A Compliant 600 V 0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF NDP U

 ..2. Size:112K  onsemi
ndf10n60z.pdf pdf_icon

NDF10N60Z

NDF10N60Z N-Channel Power MOSFET 600 V, 0.75 W Features Low ON Resistance Low Gate Charge www.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 650 V 0.75 W Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) N-Channel

 7.1. Size:137K  onsemi
ndf10n62z ndp10n62z.pdf pdf_icon

NDF10N60Z

NDF10N62Z, NDP10N62Z N-Channel Power MOSFET 620 V, 0.65 W Features Low ON Resistance Low Gate Charge http //onsemi.com Zener Diode-protected Gate 100% Avalanche Tested VDSS RDS(ON) (TYP) @ 5 A These Devices are Pb-Free and RoHS Compliant 620 V 0.65 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) Rating Symbol NDF10N62Z NDP10N62Z Unit N-Channel

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