NDF10N60Z Datasheet and Replacement
Type Designator: NDF10N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 10 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 150 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220FP
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NDF10N60Z Datasheet (PDF)
ndf10n60z ndp10n60z.pdf

NDF10N60Z, NDP10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 ACompliant600 V0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP U
ndf10n60z.pdf

NDF10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS650 V0.75 WCompliantABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-Channel
ndf10n62z ndp10n62z.pdf

NDF10N62Z, NDP10N62ZN-Channel Power MOSFET620 V, 0.65 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 5 A These Devices are Pb-Free and RoHS Compliant620 V0.65 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF10N62Z NDP10N62Z UnitN-Channel
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: VBNC1303 | IRFS4010PBF
Keywords - NDF10N60Z MOSFET datasheet
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History: VBNC1303 | IRFS4010PBF



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