NDF10N60Z Datasheet and Replacement
Type Designator: NDF10N60Z
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 47 nC
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 150 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO220FP
NDF10N60Z substitution
NDF10N60Z Datasheet (PDF)
ndf10n60z ndp10n60z.pdf

NDF10N60Z, NDP10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS VDSS RDS(ON) (MAX) @ 5 ACompliant600 V0.75 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF NDP U
ndf10n60z.pdf

NDF10N60ZN-Channel Power MOSFET600 V, 0.75 WFeatures Low ON Resistance Low Gate Chargewww.onsemi.com ESD Diode-Protected Gate 100% Avalanche Tested 100% Rg Tested VDSS (@ TJmax) RDS(ON) (MAX) @ 5 A These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS650 V0.75 WCompliantABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)N-Channel
ndf10n62z ndp10n62z.pdf

NDF10N62Z, NDP10N62ZN-Channel Power MOSFET620 V, 0.65 WFeatures Low ON Resistance Low Gate Chargehttp://onsemi.com Zener Diode-protected Gate 100% Avalanche TestedVDSS RDS(ON) (TYP) @ 5 A These Devices are Pb-Free and RoHS Compliant620 V0.65 ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted)Rating Symbol NDF10N62Z NDP10N62Z UnitN-Channel
Datasheet: FDMA910PZ , NDF04N62Z , NDF05N50Z , NDF06N60Z , FDMC8327L , NDF06N62Z , NDF08N50Z , NDF08N60Z , IRF540 , FDMS7678 , NDF10N62Z , NDF11N50Z , NIC9N05TS1 , NID6002N , NID9N05CL , NIF9N05CL , NIMD6001 .
Keywords - NDF10N60Z MOSFET datasheet
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