NTB25P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB25P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 15 V
|Id|ⓘ - Corriente continua de drenaje: 27.5 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 345 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de NTB25P06 MOSFET
NTB25P06 Datasheet (PDF)
ntb25p06 nvb25p06.pdf

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06-d.pdf

NTB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXTypical Applications PWM Motor Controls-60 V 65 mW @ -10 V -27.5 A Power Supplies ConvertersP-Ch
ntb25p06g nvb25p06.pdf

NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06t4g.pdf

NTB25P06T4Gwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Lo
Otros transistores... NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N , IRFB4227 , NTB35N15 , NTB45N06 , NTB45N06L , NTB5404N , NTB5405N , NTB5426N , NTB5605P , NTB60N06 .



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