NTB25P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB25P06
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 120 W
Voltaje máximo drenador - fuente |Vds|: 60 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 27.5 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 33 nC
Tiempo de subida (tr): 72 nS
Conductancia de drenaje-sustrato (Cd): 345 pF
Resistencia entre drenaje y fuente RDS(on): 0.075 Ohm
Paquete / Cubierta: D2PAK
Búsqueda de reemplazo de MOSFET NTB25P06
NTB25P06 Datasheet (PDF)
ntb25p06 nvb25p06.pdf
NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06-d.pdf
NTB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com Pb-Free Packages are AvailableV(BR)DSS RDS(on) TYP ID MAXTypical Applications PWM Motor Controls-60 V 65 mW @ -10 V -27.5 A Power Supplies ConvertersP-Ch
ntb25p06g nvb25p06.pdf
NTB25P06, NVB25P06Power MOSFET-60 V, -27.5 A, P-Channel D2PAKDesigned for low voltage, high speed switching applications and towithstand high energy in the avalanche and commutation modes.Featureshttp://onsemi.com AEC Q101 Qualified - NVB25P06 These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) TYP ID MAXTypical Applications-60 V 65 mW @ -10 V -27.5 A
ntb25p06t4g.pdf
NTB25P06T4Gwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition TrenchFET Power MOSFET0.048at VGS = - 10 V- 35- 60 60 100 % Rg and UIS Tested0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Power Switch Lo
Otros transistores... NID9N05CL , NIF9N05CL , NIMD6001 , FDD4N60NZ , NTA4001N , NTA4151P , NTA4153N , NTA7002N , IRFB4115 , NTB35N15 , NTB45N06 , NTB45N06L , NTB5404N , NTB5405N , NTB5426N , NTB5605P , NTB60N06 .
