NTB25P06 MOSFET Datasheet: P-Ch, 60V, 27.5A. Full specification with pinout and replacement list

NTB25P06 Specs and Replacement

Type Designator: NTB25P06

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V

|Id| ⓘ - Maximum Drain Current: 27.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 72 nS

Cossⓘ - Output Capacitance: 345 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: D2PAK

NTB25P06 substitution

- MOSFET ⓘ Cross-Reference Search

NTB25P06 datasheet

..1. Size:129K onsemi
ntb25p06 nvb25p06.pdf pdf_icon

... See More ⇒

0.1. Size:67K onsemi
ntb25p06-d.pdf pdf_icon

NTB25P06 Power MOSFET -60 V, -27.5 A, P-Channel D2PAK Designed for low voltage, high speed switching applications and to withstand high energy in the avalanche and commutation modes. Features http //onsemi.com Pb-Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX Typical Applications PWM Motor Controls -60 V 65 mW @ -10 V -27.5 A Power Supplies Converters P-Ch... See More ⇒

0.2. Size:125K onsemi
ntb25p06g nvb25p06.pdf pdf_icon

... See More ⇒

0.3. Size:1447K cn vbsemi
ntb25p06t4g.pdf pdf_icon

NTB25P06T4G www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.048at VGS = - 10 V - 35 - 60 60 100 % Rg and UIS Tested 0.060at VGS = - 4.5 V - 30 Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Power Switch Lo... See More ⇒

Detailed specifications: NID9N05CL, NIF9N05CL, NIMD6001, FDD4N60NZ, NTA4001N, NTA4151P, NTA4153N, NTA7002N, 10N60, NTB35N15, NTB45N06, NTB45N06L, NTB5404N, NTB5405N, NTB5426N, NTB5605P, NTB60N06