NTB5426N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTB5426N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 215 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
Paquete / Cubierta: D2PAK
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NTB5426N Datasheet (PDF)
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ntb5404nt4g ntp5404nrg.pdf
NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on)http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantApplicationsD Electronic Brake
Otros transistores... NTA4153N , NTA7002N , NTB25P06 , NTB35N15 , NTB45N06 , NTB45N06L , NTB5404N , NTB5405N , AON7408 , NTB5605P , NTB60N06 , NTB6410AN , NTB6411AN , NTB6412AN , NTB6413AN , NTD110N02R , NTD14N03R .
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