NTB5426N MOSFET. Datasheet pdf. Equivalent
Type Designator: NTB5426N
Marking Code: 5426N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 215 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 150 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 1000 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: D2PAK
NTB5426N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTB5426N Datasheet (PDF)
ntb5426nt4g ntb5426n ntp5426n ntp5426ng.pdf
NTB5426N, NTP5426NPower MOSFET120 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current Capability Avalanche Energy SpecifiedID MAXV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 6.0 mW @ 10 V 120 AApplications Power Supplies ConvertersN-Channel Power Motor ControlsD Bridge CircuitsMAXI
ntb5404n ntp5404n.pdf
NTB5404N, NTP5404NPower MOSFET40 V, 136 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on) http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) TYP (Note 1) This is a Pb-Free Device40 V 3.5 mW @ 10 V 136 AApplicationsD Electronic Brake Systems Electronic Power SteeringN-Channel Bridge CircuitsGMAXIMUM RATI
ntb5412nt4g ntb5412n ntp5412n ntp5412ng.pdf
NTB5412N, NTP5412NPower MOSFET60 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 14 mW @ 10 V 60 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5404nt4g ntp5404nrg.pdf
NTB5404N, NTP5404N,NVB5404NPower MOSFET40 V, 167 A, Single N-Channel, D2PAK &TO-220Features Low RDS(on)http://onsemi.com High Current CapabilityID MAX Low Gate ChargeV(BR)DSS RDS(ON) MAX (Note 1) AEC-Q101 Qualified and PPAP Capable - NVB5404N40 V 4.5 mW @ 10 V 167 A These Devices are Pb-Free and are RoHS CompliantApplicationsD Electronic Brake
ntb5405ng.pdf
NTB5405N, NVB5405NPower MOSFET40 V, 116 A, Single N-Channel, D2PAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge AEC-Q101 Qualified and PPAP Capable - NVB5405NID MAXV(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant40 V 4.9 m @ 10 V 116 AApplications Electronic Brake SystemsN-Channel
ntb5411nt4g ntp5411ng.pdf
NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5411n ntp5411n.pdf
NTB5411N, NTP5411NPower MOSFET80 Amps, 60 VoltsN-Channel D2PAK, TO-220Featureshttp://onsemi.com Low RDS(on) High Current CapabilityID MAX Avalanche Energy SpecifiedV(BR)DSS RDS(ON) MAX (Note 1) These are Pb-Free Devices60 V 10 mW @ 10 V 80 AApplications LED Lighting and LED Backlight Drivers DC-DC ConvertersN-Channel DC Motor DriversD
ntb5405n.pdf
NTB5405NPower MOSFET40 V, 116 A, Single N-Channel, D2PAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Low Gate Charge These are Pb-Free DevicesID MAXApplicationsV(BR)DSS RDS(ON) TYP (Note 1) Electronic Brake Systems40 V 4.9 m @ 10 V 116 A Electronic Power Steering Bridge CircuitsN-ChannelMAXIMUM RATINGS (TJ = 25C unless
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