NTD3055L170 Todos los transistores

 ..1. Size:238K  onsemi
 ntd3055l170 nvd3055l170.pdf

NTD3055L170, NVD3055L170 MOSFET Power, N-Channel, Logic Level, DPAK/IPAK www.onsemi.com 9.0 A, 60 V Designed for low voltage, high speed switching applications in 9.0 AMPERES, 60 VOLTS power supplies, converters and power motor controls and bridge RDS(on) = 170 mW circuits. D Features NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Chang

 ..2. Size:132K  onsemi
 ntd3055l170.pdf

NTD3055L170 Power MOSFET 9.0 Amps, 60 Volts, Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. 9.0 AMPERES, 60 VOLTS Features RDS(on) = 170 mW These are Pb-Free Devices N-Channel Typical Applications D Power Supplies Converters Powe

 0.1. Size:123K  onsemi
 ntd3055l170t4g.pdf

NTD3055L170, NVD3055L170 Power MOSFET 9.0 A, 60 V, Logic Level, N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge http //onsemi.com circuits. 9.0 AMPERES, 60 VOLTS Features NVD Prefix for Automotive and Other Applications Requiring RDS(on) = 170 mW Unique Site and Control Change Requirement

 0.2. Size:852K  cn vbsemi
 ntd3055l170t4g.pdf

NTD3055L170T4G www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters

 5.1. Size:154K  onsemi
 ntd3055l104t4g ntdv3055l104.pdf

NTD3055L104, NTDV3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in http //onsemi.com power supplies, converters and power motor controls and bridge circuits. Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) 60 V 104 mW 12 A Lower VDS(on) Tighter VSD Specification N-Channel Lower Di

 5.2. Size:91K  onsemi
 ntd3055l104 ntdv3055l104.pdf

NTD3055L104, NTDV3055L104 Power MOSFET 12 A, 60 V, Logic Level N-Channel DPAK/IPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. www.onsemi.com Features Lower RDS(on) V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov

 5.3. Size:120K  onsemi
 ntd3055l104.pdf

NTD3055L104 Power MOSFET 12 Amps, 60 Volts, Logic Level N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. http //onsemi.com Features V(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery Time N

 5.4. Size:821K  cn vbsemi
 ntd3055l104.pdf

NTD3055L104 www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.032 at VGS = 10 V 35d TrenchFET Power MOSFET 60 21.7 0.037 at VGS = 4.5 V 30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply D TO-251 - Secon