NTD3055L170 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTD3055L170
Маркировка: 3170L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 28.8 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 15 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 9 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 4.7 nC
Время нарастания (tr): 69 ns
Выходная емкость (Cd): 70 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.17 Ohm
Тип корпуса: DPAK
Аналог (замена) для NTD3055L170
NTD3055L170 Datasheet (PDF)
ntd3055l170 nvd3055l170.pdf
NTD3055L170,NVD3055L170MOSFET Power,N-Channel, Logic Level,DPAK/IPAKwww.onsemi.com9.0 A, 60 VDesigned for low voltage, high speed switching applications in9.0 AMPERES, 60 VOLTSpower supplies, converters and power motor controls and bridgeRDS(on) = 170 mWcircuits.DFeatures NVD Prefix for Automotive and Other Applications RequiringUnique Site and Control Chang
ntd3055l170.pdf
NTD3055L170Power MOSFET9.0 Amps, 60 Volts, Logic Level,N-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.9.0 AMPERES, 60 VOLTSFeaturesRDS(on) = 170 mW These are Pb-Free DevicesN-ChannelTypical ApplicationsD Power Supplies Converters Powe
ntd3055l170t4g.pdf
NTD3055L170,NVD3055L170Power MOSFET9.0 A, 60 V, Logic Level, N-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgehttp://onsemi.comcircuits.9.0 AMPERES, 60 VOLTSFeatures NVD Prefix for Automotive and Other Applications Requiring RDS(on) = 170 mWUnique Site and Control Change Requirement
ntd3055l170t4g.pdf
NTD3055L170T4Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
ntd3055l104t4g ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inhttp://onsemi.compower supplies, converters and power motor controls and bridgecircuits.FeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on)60 V 104 mW 12 A Lower VDS(on) Tighter VSD SpecificationN-Channel Lower Di
ntd3055l104 ntdv3055l104.pdf
NTD3055L104,NTDV3055L104Power MOSFET12 A, 60 V, Logic Level N-ChannelDPAK/IPAKDesigned for low voltage, high speed switching applications in powersupplies, converters and power motor controls and bridge circuits.www.onsemi.comFeatures Lower RDS(on)V(BR)DSS RDS(on) TYP ID MAX Lower VDS(on)60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recov
ntd3055l104.pdf
NTD3055L104Power MOSFET12 Amps, 60 Volts, Logic LevelN-Channel DPAKDesigned for low voltage, high speed switching applications inpower supplies, converters and power motor controls and bridgecircuits. http://onsemi.comFeaturesV(BR)DSS RDS(on) TYP ID MAX Lower RDS(on) Lower VDS(on) 60 V 104 mW 12 A Tighter VSD Specification Lower Diode Reverse Recovery TimeN
ntd3055l104.pdf
NTD3055L104www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () ID (A) Qg (Typ.)Definition0.032 at VGS = 10 V35d TrenchFET Power MOSFET60 21.70.037 at VGS = 4.5 V30d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power SupplyDTO-251- Secon
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