NTD4865N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4865N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 44 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24.6 nS
Cossⓘ - Capacitancia de salida: 223 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0109 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de NTD4865N MOSFET
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NTD4865N datasheet
ntd4865n.pdf
NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 10.9 mW @ 10 V 25 V 44 A Applications 17.2 mW @ 4.5 V VCORE A
ntd4865n-1g.pdf
NTD4865N Power MOSFET 25 V, 44 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 10.9 m @10V 25 V 44 A Applications 17.2 m @4.5 V VCORE
ntd4863n-1g ntd4863n-d.pdf
NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App
ntd4860n.pdf
NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App
Otros transistores... NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N , NTD4863N , 5N60 , NTD4904N , NTD4906N , NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N , NTD4965N .
History: LXP152ALT1G | 30P06 | 2SK3857CT | NTD4904N | IRF3205LPBF
History: LXP152ALT1G | 30P06 | 2SK3857CT | NTD4904N | IRF3205LPBF
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