NTD4865N Todos los transistores

 

NTD4865N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4865N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 33.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 44 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 24.6 nS

Cossⓘ - Capacitancia de salida: 223 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0109 Ohm

Encapsulados: DPAK

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NTD4865N datasheet

 ..1. Size:100K  onsemi
ntd4865n.pdf pdf_icon

NTD4865N

NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 10.9 mW @ 10 V 25 V 44 A Applications 17.2 mW @ 4.5 V VCORE A

 0.1. Size:308K  onsemi
ntd4865n-1g.pdf pdf_icon

NTD4865N

NTD4865N Power MOSFET 25 V, 44 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 10.9 m @10V 25 V 44 A Applications 17.2 m @4.5 V VCORE

 8.1. Size:296K  onsemi
ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4865N

NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App

 8.2. Size:118K  onsemi
ntd4860n.pdf pdf_icon

NTD4865N

NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App

Otros transistores... NTD4813NH , NTD4815N , NTD4855N , NTD4856N , NTD4857N , NTD4858N , NTD4860N , NTD4863N , 5N60 , NTD4904N , NTD4906N , NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N , NTD4965N .

History: LXP152ALT1G | 30P06 | 2SK3857CT | NTD4904N | IRF3205LPBF

 

 

 

 

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