NTD4865N PDF and Equivalents Search

 

NTD4865N Specs and Replacement

Type Designator: NTD4865N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24.6 nS

Cossⓘ - Output Capacitance: 223 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm

Package: DPAK

NTD4865N substitution

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NTD4865N datasheet

 ..1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4865N

NTD4865N Power MOSFET 25 V, 44 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 10.9 mW @ 10 V 25 V 44 A Applications 17.2 mW @ 4.5 V VCORE A... See More ⇒

 0.1. Size:308K  onsemi
 ntd4865n-1g.pdf pdf_icon

NTD4865N

NTD4865N Power MOSFET 25 V, 44 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 10.9 m @10V 25 V 44 A Applications 17.2 m @4.5 V VCORE ... See More ⇒

 8.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4865N

NTD4863N Power MOSFET 25 V, 49 A, Single N--Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices 9.3 m @10V 25 V 49 A Applications 14 m @4.5 V VCORE App... See More ⇒

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4865N

NTD4860N Power MOSFET 25 V, 65 A, Single N-Channel, DPAK/IPAK Features Trench Technology Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices 7.5 mW @ 10 V 25 V 65 A 11.1 mW @ 4.5 V Applications VCORE App... See More ⇒

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Detailed specifications: NTD4813NH, NTD4815N, NTD4855N, NTD4856N, NTD4857N, NTD4858N, NTD4860N, NTD4863N, 5N60, NTD4904N, NTD4906N, NTD4909N, NTD4910N, NTD4913N, NTD4960N, NTD4963N, NTD4965N

Keywords - NTD4865N MOSFET specs

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