All MOSFET. NTD4865N Datasheet

 

NTD4865N Datasheet and Replacement


   Type Designator: NTD4865N
   Marking Code: 4865N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 7.2 nC
   tr ⓘ - Rise Time: 24.6 nS
   Cossⓘ - Output Capacitance: 223 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
   Package: DPAK
 

 NTD4865N substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD4865N Datasheet (PDF)

 ..1. Size:100K  onsemi
 ntd4865n.pdf pdf_icon

NTD4865N

NTD4865NPower MOSFET25 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices10.9 mW @ 10 V25 V44 AApplications17.2 mW @ 4.5 V VCORE A

 0.1. Size:308K  onsemi
 ntd4865n-1g.pdf pdf_icon

NTD4865N

NTD4865NPower MOSFET25 V, 44 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices10.9 m @10V25 V44 AApplications17.2 m @4.5 V VCORE

 8.1. Size:296K  onsemi
 ntd4863n-1g ntd4863n-d.pdf pdf_icon

NTD4865N

NTD4863NPower MOSFET25 V, 49 A, Single N--Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These are Pb--Free Devices9.3 m @10V25 V49 AApplications14 m @4.5 V VCORE App

 8.2. Size:118K  onsemi
 ntd4860n.pdf pdf_icon

NTD4865N

NTD4860NPower MOSFET25 V, 65 A, Single N-Channel, DPAK/IPAKFeatures Trench Technology Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These are Pb-Free Devices7.5 mW @ 10 V25 V65 A11.1 mW @ 4.5 VApplications VCORE App

SHOW MORE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: KDW258P

Keywords - NTD4865N MOSFET datasheet

 NTD4865N cross reference
 NTD4865N equivalent finder
 NTD4865N lookup
 NTD4865N substitution
 NTD4865N replacement

 

 
Back to Top

 


 
.