NTD4969N Todos los transistores

 

NTD4969N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD4969N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 41 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 27 nS

Cossⓘ - Capacitancia de salida: 347 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: DPAK

 Búsqueda de reemplazo de NTD4969N MOSFET

- Selecciónⓘ de transistores por parámetros

 

NTD4969N datasheet

 ..1. Size:82K  onsemi
ntd4969n.pdf pdf_icon

NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0

 0.1. Size:118K  onsemi
ntd4969n-d.pdf pdf_icon

NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0

 0.2. Size:114K  onsemi
ntd4969n-1g.pdf pdf_icon

NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0

 8.1. Size:123K  1
ntd4963ng.pdf pdf_icon

NTD4969N

NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6

Otros transistores... NTD4904N , NTD4906N , NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N , NTD4965N , IRFZ24N , NTD4970N , NTD5406N , NTD5407N , NTD5413N , NTD5414N , NTD5802N , NTD5803N , NTD5804N .

History: NTD5414N | IRLU3915PBF

 

 

 

 

↑ Back to Top
.