NTD4969N PDF and Equivalents Search

 

NTD4969N Specs and Replacement

Type Designator: NTD4969N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 26.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 41 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 347 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DPAK

NTD4969N substitution

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NTD4969N datasheet

 ..1. Size:82K  onsemi
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NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 0.1. Size:118K  onsemi
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NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 0.2. Size:114K  onsemi
ntd4969n-1g.pdf pdf_icon

NTD4969N

NTD4969N Power MOSFET 30 V, 41 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.0 ... See More ⇒

 8.1. Size:123K  1
ntd4963ng.pdf pdf_icon

NTD4969N

NTD4963N Power MOSFET 30 V, 44 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design Flexibility V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 9.6 ... See More ⇒

Detailed specifications: NTD4904N, NTD4906N, NTD4909N, NTD4910N, NTD4913N, NTD4960N, NTD4963N, NTD4965N, IRFZ24N, NTD4970N, NTD5406N, NTD5407N, NTD5413N, NTD5414N, NTD5802N, NTD5803N, NTD5804N

Keywords - NTD4969N MOSFET specs

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