NTD4970N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTD4970N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 24.6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 27.6 nS
Cossⓘ - Capacitancia de salida: 306 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET NTD4970N
NTD4970N Datasheet (PDF)
ntd4970n.pdf
NTD4970NPower MOSFET30 V, 36 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
ntd4970n-1g.pdf
NTD4970NPower MOSFET30 V, 36 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
ntd4963ng.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6
ntd4904n.pdf
NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv
ntd4906n.pdf
NTD4906NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.5 mW @ 10 V CPU Power Delivery30 V 54 A8.0 mW @ 4.5 V DC-DC Con
ntd4969n-d.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
ntd4969n-1g.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
ntd4969n.pdf
NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0
ntd4963n-1g.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
ntd4904n-1g ntd4904n.pdf
NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv
ntd4965n-d.pdf
NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7
ntd4913n.pdf
NTD4913NPower MOSFET30 V, 32 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications10.5 mW @ 10 V CPU Power Delivery30 V 32 A15 mW @ 4.5 V DC-DC Con
ntd4910n-1g.pdf
NTD4910NPower MOSFET30 V, 37 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 37 A13 mW @ 4.5 V DC-DC Conv
ntd4960n-1g.pdf
NTD4960NPower MOSFET30 V, 55 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS8.0
ntd4965n-1g.pdf
NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7
ntd4909n-1g ntd4909n.pdf
NTD4909NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications8.0 mW @ 10 V CPU Power Delivery30 V 41 A12 mW @ 4.5 V DC-DC Conv
ntd4909n.pdf
NTD4909NMOSFET Power, Single,N-Channel, DPAK/IPAK30 V, 41 AFeatures Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices8.0 mW @ 10 V30 V 41 A12 mW @ 4.5 VApplications CPU Power DeliveryD DC-
ntd4910n.pdf
NTD4910NPower MOSFET30 V, 37 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 37 A13 mW @ 4.5 V DC-DC Conv
ntd4963n.pdf
NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl
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