NTD4970N - параметры транзистора MOSFET, его аналоги, datasheet

NTD4970N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NTD4970N
   Маркировка: 4970N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 24.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 36 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 8.2 nC
   trⓘ - Время нарастания: 27.6 ns
   Cossⓘ - Выходная емкость: 306 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: DPAK

Аналог (замена) для NTD4970N

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NTD4970N Datasheet (PDF)

..1. Size:140K onsemi
ntd4970n.pdf

NTD4970N

NTD4970NPower MOSFET30 V, 36 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

0.1. Size:113K onsemi
ntd4970n-1g.pdf

NTD4970N

8.1. Size:911K onsemi
ntd4979n.pdf

NTD4970N

9.1. Size:123K 1
ntd4963ng.pdf

NTD4970N

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.6

9.2. Size:86K onsemi
ntd4904n.pdf

NTD4970N

NTD4904NPower MOSFET30 V, 79 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications 3.7 mW @ 10 V30 V 79 A5.5 mW @ 4.5 V CPU Power Delivery DC-DC Conv

9.3. Size:123K onsemi
ntd4906n.pdf

NTD4970N

NTD4906NPower MOSFET30 V, 54 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications5.5 mW @ 10 V CPU Power Delivery30 V 54 A8.0 mW @ 4.5 V DC-DC Con

9.4. Size:118K onsemi
ntd4969n-d.pdf

NTD4970N

NTD4969NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS9.0

9.5. Size:114K onsemi
ntd4969n-1g.pdf

NTD4970N

9.6. Size:82K onsemi
ntd4969n.pdf

NTD4970N

9.7. Size:115K onsemi
ntd4963n-1g.pdf

NTD4970N

NTD4963NPower MOSFET30 V, 44 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com Three Package Variations for Design Flexibility These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompl

9.8. Size:141K onsemi
ntd4904n-1g ntd4904n.pdf

NTD4970N

9.9. Size:112K onsemi
ntd4965n-d.pdf

NTD4970N

NTD4965NPower MOSFET30 V, 68 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS4.7

9.10. Size:140K onsemi
ntd4913n.pdf

NTD4970N

NTD4913NPower MOSFET30 V, 32 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications10.5 mW @ 10 V CPU Power Delivery30 V 32 A15 mW @ 4.5 V DC-DC Con

9.11. Size:138K onsemi
ntd4910n-1g.pdf

NTD4970N

NTD4910NPower MOSFET30 V, 37 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications9.0 mW @ 10 V CPU Power Delivery30 V 37 A13 mW @ 4.5 V DC-DC Conv

9.12. Size:138K onsemi
ntd4960n-1g.pdf

NTD4970N

NTD4960NPower MOSFET30 V, 55 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Three Package Variations for Design FlexibilityV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS8.0

9.13. Size:107K onsemi
ntd4965n-1g.pdf

NTD4970N

9.14. Size:138K onsemi
ntd4909n-1g ntd4909n.pdf

NTD4970N

NTD4909NPower MOSFET30 V, 41 A, Single N-Channel, DPAK/IPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(on) MAX ID MAXApplications8.0 mW @ 10 V CPU Power Delivery30 V 41 A12 mW @ 4.5 V DC-DC Conv

9.15. Size:137K onsemi
ntd4909n.pdf

NTD4970N

NTD4909NMOSFET Power, Single,N-Channel, DPAK/IPAK30 V, 41 AFeatures Low RDS(on) to Minimize Conduction Losses http://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(on) MAX ID MAX These are Pb-Free Devices8.0 mW @ 10 V30 V 41 A12 mW @ 4.5 VApplications CPU Power DeliveryD DC-

9.16. Size:108K onsemi
ntd4910n.pdf

NTD4970N