NTD5406N Todos los transistores

 

NTD5406N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTD5406N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 57 nS

Cossⓘ - Capacitancia de salida: 370 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: DPAK

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NTD5406N datasheet

 ..1. Size:120K  onsemi
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NTD5406N

NTD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless

 0.1. Size:136K  onsemi
ntd5406ng std5406nt4g.pdf pdf_icon

NTD5406N

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 8.7 m @ 10 V 70 A Applications Electronic Brake Systems Electronic Power Steering N-

 8.1. Size:135K  onsemi
ntd5407ng std5407nt4g.pdf pdf_icon

NTD5406N

NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 21 mW @ 10 V 38 A Applications Electronic Brake Systems Electronic Power Steering N-Ch

 8.2. Size:120K  onsemi
ntd5407n.pdf pdf_icon

NTD5406N

NTD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless ot

Otros transistores... NTD4909N , NTD4910N , NTD4913N , NTD4960N , NTD4963N , NTD4965N , NTD4969N , NTD4970N , 8N60 , NTD5407N , NTD5413N , NTD5414N , NTD5802N , NTD5803N , NTD5804N , NTD5805N , NTD5806N .

 

 

 

 

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