NTD5406N PDF and Equivalents Search

 

NTD5406N Specs and Replacement

Type Designator: NTD5406N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DPAK

NTD5406N substitution

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NTD5406N datasheet

 ..1. Size:120K  onsemi
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NTD5406N

NTD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 8.7 m @ 10 V 70 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless ... See More ⇒

 0.1. Size:136K  onsemi
ntd5406ng std5406nt4g.pdf pdf_icon

NTD5406N

NTD5406N, STD5406N Power MOSFET 40 V, 70 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5406N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 8.7 m @ 10 V 70 A Applications Electronic Brake Systems Electronic Power Steering N-... See More ⇒

 8.1. Size:135K  onsemi
ntd5407ng std5407nt4g.pdf pdf_icon

NTD5406N

NTD5407N, STD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge AEC Q101 Qualified - STD5407N ID MAX V(BR)DSS RDS(ON) TYP (Note 1) These Devices are Pb-Free and are RoHS Compliant 40 V 21 mW @ 10 V 38 A Applications Electronic Brake Systems Electronic Power Steering N-Ch... See More ⇒

 8.2. Size:120K  onsemi
ntd5407n.pdf pdf_icon

NTD5406N

NTD5407N Power MOSFET 40 V, 38 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Low Gate Charge These are Pb-Free Devices ID MAX V(BR)DSS RDS(ON) TYP (Note 1) Applications 40 V 21 mW @ 10 V 38 A Electronic Brake Systems Electronic Power Steering Bridge Circuits N-Channel D MAXIMUM RATINGS (TJ = 25 C unless ot... See More ⇒

Detailed specifications: NTD4909N, NTD4910N, NTD4913N, NTD4960N, NTD4963N, NTD4965N, NTD4969N, NTD4970N, 8N60, NTD5407N, NTD5413N, NTD5414N, NTD5802N, NTD5803N, NTD5804N, NTD5805N, NTD5806N

Keywords - NTD5406N MOSFET specs

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