NTD5802N Todos los transistores

 ..1. Size:118K  onsemi
 ntd5802n nvd5802n.pdf

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses www.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID 100% Avalanche Tested 4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring

 0.1. Size:136K  onsemi
 ntd5802nt4g.pdf

NTD5802N, NVD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V AEC Q101 Qualified - NVD580

 0.2. Size:109K  onsemi
 ntd5802n-d.pdf

NTD5802N Power MOSFET 40 V, Single N-Channel, 101 A DPAK Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260 C V(BR)DSS RDS(on) ID AEC Q101 Qualified 4.4 mW @ 10 V 101 A 100% Avalanche Tested 40 V These are Pb-Free Devices 7.8 mW @ 5.

 8.1. Size:133K  onsemi
 ntd5805nt4g.pdf

NTD5805N, NVD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications Requiring V(BR)DSS RDS(on) MAX ID MAX Unique Site and Control Change Requirements; AEC-Q101 16 mW @ 5.0 V Qualified and PPAP Capable 40 V 51 A These Devices

 8.2. Size:127K  onsemi
 ntd5804n.pdf

NTD5804N Power MOSFET 40 V, 69 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 12 mW @ 5.0 V 40 V 69 A CCFL Backlight 8.5 mW @ 10 V DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchronous Re

 8.3. Size:125K  onsemi
 ntd5806n.pdf

NTD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 26 mW @ 4.5 V 40 V 33 A CCFL Backlight 19 mW @ 10 V DC Motor Control Power Supply Secondary Side Synchronous Rectification D MAXIMUM RAT

 8.4. Size:124K  onsemi
 ntd5806nt4g.pdf

NTD5806N, NVD5806N Power MOSFET 40 V, 33 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified AEC-Q101 Qualified and PPAP Capable - NVD5806N V(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free and are RoHS Compliant 26 mW @ 4.5 V 40 V 33 A Applications 19 mW @ 10 V CCFL Backlight D

 8.5. Size:138K  onsemi
 ntd5804nt4g.pdf

 8.6. Size:139K  onsemi
 ntd5807nt4g.pdf

 8.7. Size:112K  onsemi
 ntd5807n-d.pdf

NTD5807N Power MOSFET 40 V, 23 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 37 mW @ 4.5 V 16 A 40 V CCFL Backlight 31 mW @ 10 V 23 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Synchr

 8.8. Size:127K  onsemi
 ntd5805n.pdf

NTD5805N Power MOSFET 40 V, 51 A, Single N-Channel, DPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 16 mW @ 5.0 V 40 V 51 A LED Backlight Driver 9.5 mW @ 10 V CCFL Backlight DC Motor Control D Power Supply Secondary Side Synchronous

 8.9. Size:111K  onsemi
 ntd5803n-d.pdf

NTD5803N Power MOSFET 40 V, 76 A, Single N-Channel, DPAK/IPAK Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified These are Pb-Free Devices V(BR)DSS RDS(on) MAX ID MAX Applications 10.1 mW @ 5.0 V 54 A 40 V CCFL Backlight 7.2 mW @ 10 V 76 A DC Motor Control Class D Amplifier D Power Supply Secondary Side Syn

 8.10. Size:838K  cn vbsemi
 ntd5806nt4g.pdf

NTD5806NT4G www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET

 8.11. Size:315K  cn vbsemi
 ntd5807nt.pdf

NTD5807NT www.VBsemi.com N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET A