All MOSFET. NTD5802N Datasheet

 

NTD5802N Datasheet and Replacement


   Type Designator: NTD5802N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93.75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 101 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 850 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0044 Ohm
   Package: DPAK
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NTD5802N Datasheet (PDF)

 ..1. Size:118K  onsemi
ntd5802n nvd5802n.pdf pdf_icon

NTD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseswww.onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID 100% Avalanche Tested4.4 mW @ 10 V 101 A NVD Prefix for Automotive and Other Applications Requiring

 0.1. Size:136K  onsemi
ntd5802nt4g.pdf pdf_icon

NTD5802N

NTD5802N, NVD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V AEC Q101 Qualified - NVD580

 0.2. Size:109K  onsemi
ntd5802n-d.pdf pdf_icon

NTD5802N

NTD5802NPower MOSFET40 V, Single N-Channel, 101 A DPAKFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses MSL 1/260CV(BR)DSS RDS(on) ID AEC Q101 Qualified4.4 mW @ 10 V 101 A 100% Avalanche Tested40 V These are Pb-Free Devices 7.8 mW @ 5.

 8.1. Size:133K  onsemi
ntd5805nt4g.pdf pdf_icon

NTD5802N

NTD5805N, NVD5805NPower MOSFET40 V, 51 A, Single N-Channel, DPAKFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com Avalanche Energy Specified NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q10116 mW @ 5.0 VQualified and PPAP Capable40 V51 A These Devices

Datasheet: NTD4963N , NTD4965N , NTD4969N , NTD4970N , NTD5406N , NTD5407N , NTD5413N , NTD5414N , EMB04N03H , NTD5803N , NTD5804N , NTD5805N , NTD5806N , NTD5807N , NTD5862N , NTD5865N , NTD5865NL .

History: HMS90N04D | LKK47-06C5 | TSM4424CS | IXFR200N10P | SM1F08NSFP | IRFB3004GPBF | BRCS200P03DP

Keywords - NTD5802N MOSFET datasheet

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