NTD5865N Todos los transistores

 

NTD5865N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTD5865N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 52 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 136 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: DPAK
 

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NTD5865N Datasheet (PDF)

 0.1. Size:137K  onsemi
 ntd5865n-1g.pdf pdf_icon

NTD5865N

NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou

 0.2. Size:108K  onsemi
 ntd5865n-d.pdf pdf_icon

NTD5865N

NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou

 0.3. Size:269K  onsemi
 ntd5865nl.pdf pdf_icon

NTD5865N

NTD5865NLN--Channel Power MOSFET60 V, 40 A, 16 mFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant16 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted) 60 V 40 A19 m @4.5 VParameter Symbol Value Uni

 0.4. Size:743K  cn vbsemi
 ntd5865nl-1g.pdf pdf_icon

NTD5865N

NTD5865NL-1Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy

MOSTRAR MÁS

Otros transistores... NTD5414N , NTD5802N , NTD5803N , NTD5804N , NTD5805N , NTD5806N , NTD5807N , NTD5862N , 60N06 , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN , NTD6416ANL , NTD70N03R .

History: SSF25N40A

 

 
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