All MOSFET. NTD5865N Datasheet

 

NTD5865N Datasheet and Replacement


   Type Designator: NTD5865N
   Marking Code: 5865N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 23 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 136 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DPAK
 

 NTD5865N substitution

   - MOSFET ⓘ Cross-Reference Search

 

NTD5865N Datasheet (PDF)

 0.1. Size:137K  onsemi
 ntd5865n-1g.pdf pdf_icon

NTD5865N

NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou

 0.2. Size:108K  onsemi
 ntd5865n-d.pdf pdf_icon

NTD5865N

NTD5865NN-Channel Power MOSFET60 V, 38 A, 18 mWFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb-Free, Halogen Free and are RoHS Compliant60 V 18 mW @ 10 V 38 AMAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value UnitDDrain-to-Sou

 0.3. Size:269K  onsemi
 ntd5865nl.pdf pdf_icon

NTD5865N

NTD5865NLN--Channel Power MOSFET60 V, 40 A, 16 mFeatures Low Gate Charge Fast Switchinghttp://onsemi.com High Current Capability 100% Avalanche TestedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free and are RoHS Compliant16 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted) 60 V 40 A19 m @4.5 VParameter Symbol Value Uni

 0.4. Size:743K  cn vbsemi
 ntd5865nl-1g.pdf pdf_icon

NTD5865N

NTD5865NL-1Gwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.011 at VGS = 10 V 55 Material categorization:600.012 at VGS = 4.5 V 47TO-251DGSN-Channel MOSFETG D STop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Sy

SHOW MORE

Datasheet: NTD5414N , NTD5802N , NTD5803N , NTD5804N , NTD5805N , NTD5806N , NTD5807N , NTD5862N , IRF520 , NTD5865NL , NTD5867NL , NTD6414AN , NTD6415AN , NTD6415ANL , NTD6416AN , NTD6416ANL , NTD70N03R .

Keywords - NTD5865N MOSFET datasheet

 NTD5865N cross reference
 NTD5865N equivalent finder
 NTD5865N lookup
 NTD5865N substitution
 NTD5865N replacement

 

 
Back to Top

 


 
.