NTD6415AN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested These Devices are Pb-Free and are RoHS CompliantID MAXV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)Parameter Symbol Value Unit100 V 55 mW @ 10 V 23 ADrain-to-Source Voltage VDSS 100 VGate

NTD6415ANLN--Channel Power MOSFET100 V, 23 A, 56 m, LogicLevelFeatures Low RDS(on)http://onsemi.com 100% Avalanche Tested AEC--Q101 QualifiedV(BR)DSS RDS(on) MAX ID MAX These Devices are Pb--Free, Halogen Free/BFR Free and are RoHSCompliant56 m @4.5 V100 V 23 A52 m @10VMAXIMUM RATINGS (TJ =25C unless otherwise noted)Parameter Symbol Value Uni

NTD6415AN, NVD6415ANN-Channel Power MOSFET100 V, 23 A, 55 mWFeatures Low RDS(on) High Current Capabilityhttp://onsemi.com 100% Avalanche Tested AEC Q101 Qualified - NVD6415ANID MAX These Devices are Pb-Free and are RoHS CompliantV(BR)DSS RDS(on) MAX (Note 1)MAXIMUM RATINGS (TJ = 25C unless otherwise noted)100 V 55 mW @ 10 V 23 AParameter Symbol Value

NTD6415ANL, NVD6415ANLN-Channel Power MOSFET100 V, 23 A, 56 mW, LogicLevelFeatures Low RDS(on)www.onsemi.com 100% Avalanche Tested NVD Prefix for Automotive and Other Applications RequiringV(BR)DSS RDS(on) MAX ID MAXUnique Site and Control Change Requirements; AEC-Q101Qualified and PPAP Capable56 mW @ 4.5 V100 V 23 A These Devices are Pb-Free and are RoHS