NTGD4161P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTGD4161P
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9.2 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: TSOP6

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NTGD4161P Datasheet (PDF)

..1. Size:2406K cn vbsemi
ntgd4161p.pdf

NTGD4161Pwww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable A

0.1. Size:67K onsemi
ntgd4161p-d ntgd4161pt1g.pdf

NTGD4161PPower MOSFET-30 V, -2.3 A, Dual P-Channel, TSOP-6Features Fast Switching Speed Low Gate Chargehttp://onsemi.com Low RDS(on) Independently Connected Devices to Provide Design FlexibilityV(BR)DSS RDS(on) Max This is a Pb-Free Device160 mW @ -10 VApplications-30 V280 mW @ -4.5 V Load Switch Battery Protection Portable Devices Like

7.1. Size:99K onsemi
ntgd4167c.pdf

NTGD4167CPower MOSFETComplementary, 30 V, +2.9/-2.2 A,TSOP-6 DualFeatures Complementary N-Channel and P-Channel MOSFEThttp://onsemi.com Small Size (3 x 3 mm) Dual TSOP-6 Package Leading Edge Trench Technology for Low On ResistanceV(BR)DSS RDS(on) MAX ID MAX (Note 1) Reduced Gate Charge to Improve Switching Response90 mW @ 4.5 V 2.6 AN-Ch Independently Co

7.2. Size:130K onsemi
ntgd4169f ntgd4169ft1g.pdf

NTGD4169FPower MOSFET andSchottky Diode30 V, 2.9 A, N-Channel with SchottkyBarrier Diode, TSOP-6Featureshttp://onsemi.com Fast Switching N-CHANNEL MOSFET Low Gate ChangeV(BR)DSS RDS(on) MaxID Max Low RDS(on)90 mW @ 4.5 V 2.6 A Low VF Schottky Diode30 V Independently Connected Devices to Provide Design Flexibility125 mW @ 2.5 V 2.2 A This is

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