NTGD4161P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTGD4161P

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.3 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.3 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.105 Ohm

Empaquetado / Estuche: TSOP6

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NTGD4161P Datasheet (PDF)

1.1. ntgd4161p-d.pdf Size:67K _onsemi

NTGD4161P Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 Features � Fast Switching Speed � Low Gate Charge http://onsemi.com � Low RDS(on) � Independently Connected Devices to Provide Design Flexibility V(BR)DSS RDS(on) Max � This is a Pb-Free Device 160 mW @ -10 V Applications -30 V 280 mW @ -4.5 V � Load Switch � Battery Protection � Portable Devices Like PDAs, Cellular Phon

3.1. ntgd4167c.pdf Size:99K _onsemi

NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features • Complementary N-Channel and P-Channel MOSFET http://onsemi.com • Small Size (3 x 3 mm) Dual TSOP-6 Package • Leading Edge Trench Technology for Low On Resistance V(BR)DSS RDS(on) MAX ID MAX (Note 1) • Reduced Gate Charge to Improve Switching Response 90 mW @ 4.5 V 2.6 A N-Ch • Independently Co

3.2. ntgd4169f.pdf Size:130K _onsemi

NTGD4169F Power MOSFET and Schottky Diode 30 V, 2.9 A, N-Channel with Schottky Barrier Diode, TSOP-6 Features http://onsemi.com � Fast Switching N-CHANNEL MOSFET � Low Gate Change V(BR)DSS RDS(on) Max ID Max � Low RDS(on) 90 mW @ 4.5 V 2.6 A � Low VF Schottky Diode 30 V � Independently Connected Devices to Provide Design Flexibility 125 mW @ 2.5 V 2.2 A � This is a Pb-Free Devic

Otros transistores... NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , NTGD1100L , NTGD3148N , IRF840 , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 , NTGS3446 , NTGS3455 .

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