NTHD4508N Todos los transistores

 

NTHD4508N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTHD4508N
   Código: C8*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Qgⓘ - Carga de la puerta: 2.6 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
   Paquete / Cubierta: CHIPFET8
 

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NTHD4508N Datasheet (PDF)

 ..1. Size:120K  onsemi
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NTHD4508N

NTHD4508NMOSFET Power, Dual,N-Channel, ChipFET20 V, 4.1 AFeatureshttp://onsemi.com Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6V(BR)DSS RDS(on) TYP ID MAX Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is Available 60 mW @ 4.5 V20 V 4.1 A80 mW @ 2.5 VApplications

 0.1. Size:55K  onsemi
nthd4508n-d.pdf pdf_icon

NTHD4508N

NTHD4508NPower MOSFET20 V, 4.1 A, Dual N-Channel ChipFETtFeatures Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6http://onsemi.com Excellent Thermal Capabilities Where Heat Transfer is Required Pb-Free Package is AvailableV(BR)DSS RDS(on) TYP ID MAXApplications60 mW @ 4.5 V20 V 4.1 A DC-DC Buck/Boost Co

 7.1. Size:67K  onsemi
nthd4502n-d.pdf pdf_icon

NTHD4508N

NTHD4502NPower MOSFET30 V, 3.9 A, Dual N-Channel ChipFETtFeatures Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.http://onsemi.comIdeal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal forV(BR)DSS RDS(on) TYP ID

 7.2. Size:105K  onsemi
nthd4502n.pdf pdf_icon

NTHD4508N

NTHD4502NPower MOSFET30 V, 3.9 A, Dual N-Channel ChipFETtFeatures Planar Technology Device Offers Low RDS(on) and Fast Switching Speed Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6.http://onsemi.comIdeal Device for Applications Where Board Space is at a Premium. ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal forV(BR)DSS RDS(on) TYP ID

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