NTHS4101P Todos los transistores

 ..1. Size:118K  onsemi
 nths4101p.pdf

NTHS4101P MOSFET Power, P-Channel, ChipFET -20 V, 6.7 A Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 making it an Ideal Device for Applications where Board Space is at a V(BR)DSS RDS(on) TYP ID MAX Premium 21 mW @ -4.5 V Low Profile (

 0.1. Size:59K  onsemi
 nths4101p-d.pdf

NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (

 0.2. Size:122K  onsemi
 nths4101pt1g.pdf

NTHS4101P Power MOSFET -20 V, 6.7 A, P-Channel ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package Miniature ChipFET Package 40% Smaller Footprint than TSOP-6 http //onsemi.com making it an Ideal Device for Applications where Board Space is at a Premium V(BR)DSS RDS(on) TYP ID MAX Low Profile (

 8.1. Size:193K  onsemi
 nths4111pt1g.pdf

NTHS4111P Power MOSFET -30 V, -6.1 A, Single P-Channel, ChipFETt Features Offers an Ultra Low RDS(on) Solution in the ChipFET Package http //onsemi.com ChipFET Package 40% Smaller Footprint than TSOP-6 Low Profile (

 8.2. Size:84K  onsemi
 nths4166n nths4166nt1g.pdf

NTHS4166N Power MOSFET 30 V, 8.2 A, Single N-Channel, ChipFETt Package Features http //onsemi.com Trench Technology Low RDS(on) to Minimize Conduction Losses Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6 V(BR)DSS RDS(on) Max ID Max Excellent Thermal Capabilities 22 mW @ 10 V This is a Pb-Free Device 30 V 8.2 A 27 mW @ 4.5 V Applications