NTJS4151P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTJS4151P
Código: TY*
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1 W
Voltaje máximo drenador - fuente |Vds|: 20 V
Voltaje máximo fuente - puerta |Vgs|: 12 V
Corriente continua de drenaje |Id|: 3.3 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 1.2 V
Carga de la puerta (Qg): 10 nC
Conductancia de drenaje-sustrato (Cd): 160 pF
Resistencia entre drenaje y fuente RDS(on): 0.06 Ohm
Paquete / Cubierta: SC88 SOT363
Búsqueda de reemplazo de MOSFET NTJS4151P
NTJS4151P Datasheet (PDF)
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