NTJS4151P MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTJS4151P datasheet

..1. Size:143K onsemi
ntjs4151p ntjs4151pt1 ntjs4151pt1g.pdf pdf_icon

NTJS4151P Trench Power MOSFET -20 V, -4.2 A, Single P-Channel, SC-88 Features Leading Trench Technology for Low RDS(ON) Extending Battery Life http //onsemi.com SC-88 Small Outline (2x2 mm) for Maximum Circuit Board V(BR)DSS RDS(on) Typ ID Max Utilization, Same as SC-70-6 47 mW @ -4.5 V Gate Diodes for ESD Protection -20 V 70 mW @ -2.5 V -4.2 A Pb-Free Package is Avai

8.1. Size:81K onsemi
ntjs4160n-d ntjs4160nt1g.pdf pdf_icon

NTJS4160N Power MOSFET 30 V, 3.2 A, Single N-Channel, SC-88 Features Offers an Low RDS(on) Solution in the SC-88 Package Low Profile (

9.1. Size:102K onsemi
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NTJS4405N Small Signal MOSFET 25 V, 1.2 A, Single, N-Channel, SC-88 Features Advance Planar Technology for Fast Switching, Low RDS(on) http //onsemi.com Higher Efficiency Extending Battery Life V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 249 mW @ 4.5 V 25 V 1.2 A Applications 299 mW @ 2.7 V Boost and Buck Converter Load Switch N-Channel Batt

9.2. Size:191K onsemi
ntjs4405n nvjs4405n.pdf pdf_icon

NTJS4405N, NVJS4405N MOSFET Single, N-Channel, Small Signal, SC-88 25 V, 1.2 A http //onsemi.com Features V(BR)DSS RDS(on) Typ ID Max Advance Planar Technology for Fast Switching, Low RDS(on) 249 mW @ 4.5 V Higher Efficiency Extending Battery Life 25 V 1.2 A 299 mW @ 2.7 V AEC-Q101 Qualified and PPAP Capable - NVJS4405N These Devices are Pb-Free and are RoHS Co