NTLJD4116N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTLJD4116N
   Código: JF*
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.71 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 5.4 nC
   trⓘ - Tiempo de subida: 11.8 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
   Paquete / Cubierta: WDFN6

Búsqueda de reemplazo de MOSFET NTLJD4116N

NTLJD4116N Datasheet (PDF)

0.1. Size:80K onsemi
ntljd4116n-d.pdf

NTLJD4116NPower MOSFET30 V, 4.6 A, mCoolt Dual N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package70 mW @ 4.5 V 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logi

9.1. Size:127K onsemi
ntljd3119ctag ntljd3119ctbg.pdf

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

9.2. Size:151K onsemi
ntljd3115p.pdf

NTLJD3115PPower MOSFET-20 V, -4.1 A, mCoolt Dual P-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive

9.3. Size:128K onsemi
ntljd3182fztag ntljd3182fztbg.pdf

NTLJD3182FZPower MOSFET andSchottky Diode-20 V, -4.0 A, mCoolt Single P-Channel& Schottky Barrier Diode, ESDFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MaxID Max Low Profile (

9.4. Size:124K onsemi
ntljd2104p.pdf

NTLJD2104PPower MOSFET-12 V, -4.3 A, mCOOLE Dual P-Channel,2x2 mm, WDFN packageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) in 2x2 mm PackageV(BR)DSS RDS(on) TYP ID MAX Footprint Same as SC-88 Package60 mW @ -4.5 V -3.0 A Low Profile (

9.5. Size:169K onsemi
ntljd3119c.pdf

Otros transistores... NTJS4405N , NTK3043N , NTK3134N , NTK3139P , NTLGD3502N , NTLGF3402P , NTLJD3115P , NTLJD3119C , IRFB3607 , NTLJF3117P , NTLJF4156N , NTLJS2103P , NTLJS3113P , NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N .

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