Справочник MOSFET. NTLJD4116N

 

NTLJD4116N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTLJD4116N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.71 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 8 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 11.8 ns
   Cossⓘ - Выходная емкость: 51 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.07 Ohm
   Тип корпуса: WDFN6

 Аналог (замена) для NTLJD4116N

 

 

NTLJD4116N Datasheet (PDF)

 0.1. Size:80K  onsemi
 ntljd4116n-d.pdf

NTLJD4116N NTLJD4116N

NTLJD4116NPower MOSFET30 V, 4.6 A, mCoolt Dual N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package70 mW @ 4.5 V 1.5 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logi

 9.1. Size:127K  onsemi
 ntljd3119ctag ntljd3119ctbg.pdf

NTLJD4116N NTLJD4116N

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

 9.2. Size:151K  onsemi
 ntljd3115p.pdf

NTLJD4116N NTLJD4116N

NTLJD3115PPower MOSFET-20 V, -4.1 A, mCoolt Dual P-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) Solution in 2x2 mm Package100 mW @ -4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive

 9.3. Size:128K  onsemi
 ntljd3182fztag ntljd3182fztbg.pdf

NTLJD4116N NTLJD4116N

NTLJD3182FZPower MOSFET andSchottky Diode-20 V, -4.0 A, mCoolt Single P-Channel& Schottky Barrier Diode, ESDFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) Solution in 2x2 mm Package P-CHANNEL MOSFET Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MaxID Max Low Profile (

 9.4. Size:124K  onsemi
 ntljd2104p.pdf

NTLJD4116N NTLJD4116N

NTLJD2104PPower MOSFET-12 V, -4.3 A, mCOOLE Dual P-Channel,2x2 mm, WDFN packageFeatures WDFN 2x2 mm Package with Exposed Drain Pads for Excellenthttp://onsemi.comThermal Conduction Lowest RDS(on) in 2x2 mm PackageV(BR)DSS RDS(on) TYP ID MAX Footprint Same as SC-88 Package60 mW @ -4.5 V -3.0 A Low Profile (

 9.5. Size:169K  onsemi
 ntljd3119c.pdf

NTLJD4116N NTLJD4116N

NTLJD3119CPower MOSFET20 V/-20 V, 4.6 A/-4.1 A, mCooltComplementary, 2x2 mm, WDFN PackageFeatures Complementary N-Channel and P-Channel MOSFET WDFN Package with Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction Footprint Same as SC-88 PackageV(BR)DSS RDS(on) MAX ID MAX Leading Edge Trench Technology for Low On Resistance65 mW @ 4.5 V 3.8 A

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