NTLJF3117P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTLJF3117P
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.71 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 2.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13.2 nS
Cossⓘ - Capacitancia de salida: 91 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: WDFN6
Búsqueda de reemplazo de NTLJF3117P MOSFET
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NTLJF3117P datasheet
ntljf3117p.pdf
NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same
ntljf3117p-d ntljf3117pt1g ntljf3117ptag.pdf
NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same
ntljf3118n ntljf3118ntag.pdf
NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction 65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package 20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o
ntljf4156n ntljf4156nt1g ntljf4156ntag.pdf
NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout 30 V 90 mW @ 2.5 V 4.6 A RD
Otros transistores... NTK3043N , NTK3134N , NTK3139P , NTLGD3502N , NTLGF3402P , NTLJD3115P , NTLJD3119C , NTLJD4116N , AON6380 , NTLJF4156N , NTLJS2103P , NTLJS3113P , NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R .
History: WSF70P03
History: WSF70P03
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