NTLJF3117P MOSFET Datasheet: P-Ch, 20V, 2.3A. Full specification with pinout and replacement list

NTLJF3117P Specs and Replacement

Type Designator: NTLJF3117P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13.2 nS

Cossⓘ - Output Capacitance: 91 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: WDFN6

NTLJF3117P substitution

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NTLJF3117P datasheet

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NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same ... See More ⇒

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NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction 65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package 20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o... See More ⇒

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NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout 30 V 90 mW @ 2.5 V 4.6 A RD... See More ⇒