NTLJF4156N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTLJF4156N datasheet

..1. Size:99K onsemi
ntljf4156n ntljf4156nt1g ntljf4156ntag.pdf pdf_icon

NTLJF4156N Power MOSFET and Schottky Diode 30 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) MAX ID MAX (Note 1) WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 70 mW @ 4.5 V Co-Packaged MOSFET and Schottky For Easy Circuit Layout 30 V 90 mW @ 2.5 V 4.6 A RD

..2. Size:143K onsemi
ntljf4156n.pdf pdf_icon

NTLJF4156N MOSFET Power, N-Channel with Schottky Barrier Diode, Schottky Diode, mCool, WDFN http //onsemi.com 2X2 mm MOSFET 30 V, 4.6 A, 2.0 A V(BR)DSS RDS(on) MAX ID MAX (Note 1) 70 mW @ 4.5 V Features 30 V 90 mW @ 2.5 V 4.6 A WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction 125 mW @ 1.8 V Co-Packaged MOSFET and Schottky For Easy Circuit Layo

9.1. Size:112K onsemi
ntljf3117p-d ntljf3117pt1g ntljf3117ptag.pdf pdf_icon

NTLJF3117P Power MOSFET and Schottky Diode -20 V, -4.1 A, P-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, mCool] Package http //onsemi.com Features MOSFET FETKYt Configuration with MOSFET plus Low Vf Schottky Diode mCOOLt Package Provides Exposed Drain Pad for Excellent V(BR)DSS RDS(on) MAX ID MAX (Note 1) Thermal Conduction 100 mW @ -4.5 V 2x2 mm Footprint Same

9.2. Size:110K onsemi
ntljf3118n ntljf3118ntag.pdf pdf_icon

NTLJF3118N Power MOSFET and Schottky Diode 20 V, 4.6 A, mCool] N-Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm http //onsemi.com WDFN Package MOSFET Features V(BR)DSS RDS(on) Max ID Max WDFN 2x2 mm Package Provides Exposed Drain Pad for Excellent Thermal Conduction 65 mW @ 4.5 V 3.8 A Footprint Same as SC-88 Package 20 V 85 mW @ 2.5 V 2.0 A 1.8 V VGS Rated RDS(o