NTMD4840N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMD4840N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.14 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: SOIC8
Búsqueda de reemplazo de NTMD4840N MOSFET
NTMD4840N Datasheet (PDF)
ntmd4840n.pdf

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ntmd4820n.pdf

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ntmd4n03r2.pdf

NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S
Otros transistores... NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF , NTMD4820N , P0903BDG , NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N .
History: IRF3710LPBF | KU082N03Q | SFS04R02DF | NCE0110AK | SI5479DU | FQPF18N50V2 | NVATS4A103PZ
History: IRF3710LPBF | KU082N03Q | SFS04R02DF | NCE0110AK | SI5479DU | FQPF18N50V2 | NVATS4A103PZ



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