NTMD4840N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NTMD4840N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.14 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
   Paquete / Cubierta: SOIC8

Búsqueda de reemplazo de MOSFET NTMD4840N

NTMD4840N Datasheet (PDF)

..1. Size:135K onsemi
ntmd4840n.pdf

NTMD4840NPower MOSFET30 V, 7.5 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device24 mW @ 10 V30 V 7.5 AApplications

8.1. Size:135K onsemi
ntmd4820n.pdf

NTMD4820NPower MOSFET30 V, 8 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max20 mW @ 10 VApplications30 V 8 A Disk Drives27 mW @ 4.5 V

8.2. Size:91K onsemi
ntmd4884nf ntmd4884nfr2g.pdf

NTMD4884NFPower MOSFET andSchottky Diode30 V, 5.7 A, Single N-Channel with 30 V,2.8 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction L

9.1. Size:156K onsemi
ntmd4n03r2.pdf

NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S

9.2. Size:116K onsemi
ntmd4n03 nvmd4n03.pdf

NTMD4N03, NVMD4N03Power MOSFET4 A, 30 V, N-Channel SO-8 DualFeatures Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provideshttp://onsemi.comHigher Efficiency and Extends Battery Life- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ)VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S

9.3. Size:98K onsemi
ntmd4184pf ntmd4184pfr2g.pdf

NTMD4184PFPower MOSFET andSchottky Diode-30 V, -4.0 A, Single P-Channel with 20 V,2.2 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility P-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction

Otros transistores... NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF , NTMD4820N , IRFZ46N , NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N .

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