NTMD4840N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMD4840N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.14 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 140 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.024 Ohm
Paquete / Cubierta: SOIC8
NTMD4840N Datasheet (PDF)
ntmd4840n.pdf

NTMD4840NPower MOSFET30 V, 7.5 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device24 mW @ 10 V30 V 7.5 AApplications
ntmd4820n.pdf

NTMD4820NPower MOSFET30 V, 8 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max20 mW @ 10 VApplications30 V 8 A Disk Drives27 mW @ 4.5 V
ntmd4884nf ntmd4884nfr2g.pdf

NTMD4884NFPower MOSFET andSchottky Diode30 V, 5.7 A, Single N-Channel with 30 V,2.8 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction L
ntmd4n03r2.pdf

NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S
Otros transistores... NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF , NTMD4820N , P0903BDG , NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N .
History: SSG9435 | TDM3432 | IRFH7934
History: SSG9435 | TDM3432 | IRFH7934



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