NTMD4840N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMD4840N
Маркировка: 4840N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.14 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 5.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 4.8 nC
Время нарастания (tr): 5 ns
Выходная емкость (Cd): 140 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.024 Ohm
Тип корпуса: SOIC8
NTMD4840N Datasheet (PDF)
ntmd4840n.pdf
NTMD4840NPower MOSFET30 V, 7.5 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device24 mW @ 10 V30 V 7.5 AApplications
ntmd4820n.pdf
NTMD4820NPower MOSFET30 V, 8 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max20 mW @ 10 VApplications30 V 8 A Disk Drives27 mW @ 4.5 V
ntmd4884nf ntmd4884nfr2g.pdf
NTMD4884NFPower MOSFET andSchottky Diode30 V, 5.7 A, Single N-Channel with 30 V,2.8 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction L
ntmd4n03r2.pdf
NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S
ntmd4n03 nvmd4n03.pdf
NTMD4N03, NVMD4N03Power MOSFET4 A, 30 V, N-Channel SO-8 DualFeatures Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provideshttp://onsemi.comHigher Efficiency and Extends Battery Life- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ)VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S
ntmd4184pf ntmd4184pfr2g.pdf
NTMD4184PFPower MOSFET andSchottky Diode-30 V, -4.0 A, Single P-Channel with 20 V,2.2 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility P-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction
Другие MOSFET... NTLJS4114N , QM3098M6 , NTLUF4189NZ , QN3109M6N , S60N12R , NTMD3P03 , NTMD4184PF , NTMD4820N , AON7506 , NTMD4884NF , NTMD5836NL , NTMD5838NL , NTMD6N02R2 , NTMD6N03R2 , NTMD6N04R2 , S60N12S , NTMFS4119N .
History: VB162KX
