NTMD4884NF MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTMD4884NF datasheet

..1. Size:91K onsemi
ntmd4884nf ntmd4884nfr2g.pdf pdf_icon

NTMD4884NF Power MOSFET and Schottky Diode 30 V, 5.7 A, Single N-Channel with 30 V, 2.8 A, Schottky Barrier Diode Features FETKYt Surface Mount Package Saves Board Space http //onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing for Design Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to Minimize V(BR)DSS RDS(on) Max ID Max Conduction L

8.1. Size:135K onsemi
ntmd4820n.pdf pdf_icon

8.2. Size:135K onsemi
ntmd4840n.pdf pdf_icon

NTMD4840N Power MOSFET 30 V, 7.5 A, Dual N-Channel, SOIC-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses http //onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board Space V(BR)DSS RDS(on) Max ID Max This is a Pb-Free Device 24 mW @ 10 V 30 V 7.5 A Applications

9.1. Size:156K onsemi
ntmd4n03r2.pdf pdf_icon

NTMD4N03R2 Power MOSFET 4 Amps, 30 Volts N-Channel SO-8 Dual Features http //onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provides VDSS RDS(ON) Typ ID Max Higher Efficiency and Extends Battery Life 30 V 48 mW @ VGS = 10 V 4.0 A - RDS(on) = 0.048 W, VGS = 10 V (Typ) - RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S