NTMD4884NF
MOSFET. Datasheet pdf. Equivalent
Type Designator: NTMD4884NF
Marking Code: 4884NF
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 4.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 2.8
nC
trⓘ - Rise Time: 6.5
nS
Cossⓘ -
Output Capacitance: 60
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.048
Ohm
Package:
SOIC8
NTMD4884NF
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
NTMD4884NF
Datasheet (PDF)
..1. Size:91K onsemi
ntmd4884nf ntmd4884nfr2g.pdf 
NTMD4884NFPower MOSFET andSchottky Diode30 V, 5.7 A, Single N-Channel with 30 V,2.8 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility N-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction L
8.1. Size:135K onsemi
ntmd4820n.pdf
NTMD4820NPower MOSFET30 V, 8 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max20 mW @ 10 VApplications30 V 8 A Disk Drives27 mW @ 4.5 V
8.2. Size:135K onsemi
ntmd4840n.pdf
NTMD4840NPower MOSFET30 V, 7.5 A, Dual N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses Dual SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(on) MaxID Max This is a Pb-Free Device24 mW @ 10 V30 V 7.5 AApplications
9.1. Size:156K onsemi
ntmd4n03r2.pdf
NTMD4N03R2Power MOSFET4 Amps, 30 VoltsN-Channel SO-8 DualFeatures http://onsemi.com Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance ProvidesVDSS RDS(ON) Typ ID MaxHigher Efficiency and Extends Battery Life30 V 48 mW @ VGS = 10 V 4.0 A- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ) Miniature S
9.2. Size:116K onsemi
ntmd4n03 nvmd4n03.pdf
NTMD4N03, NVMD4N03Power MOSFET4 A, 30 V, N-Channel SO-8 DualFeatures Designed for use in low voltage, high speed switching applications Ultra Low On-Resistance Provideshttp://onsemi.comHigher Efficiency and Extends Battery Life- RDS(on) = 0.048 W, VGS = 10 V (Typ)- RDS(on) = 0.065 W, VGS = 4.5 V (Typ)VDSS RDS(ON) Typ ID Max Miniature SO-8 Surface Mount Package - S
9.3. Size:98K onsemi
ntmd4184pf ntmd4184pfr2g.pdf
NTMD4184PFPower MOSFET andSchottky Diode-30 V, -4.0 A, Single P-Channel with 20 V,2.2 A, Schottky Barrier DiodeFeatures FETKYt Surface Mount Package Saves Board Spacehttp://onsemi.com Independent Pin-Out for MOSFET and Schottky Allowing forDesign Flexibility P-CHANNEL MOSFET Low RDS(on) MOSFET and Low VF Schottky to MinimizeV(BR)DSS RDS(on) MaxID MaxConduction
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