NTMFS4851N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4851N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.16 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39.8 nS
Cossⓘ - Capacitancia de salida: 333 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de NTMFS4851N MOSFET
NTMFS4851N Datasheet (PDF)
ntmfs4851n.pdf

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Not
ntmfs4851nt1g.pdf

NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Note
ntmfs4852nt1g.pdf

NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
ntmfs4854nst1g.pdf

NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
Otros transistores... NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , RU7088R , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF , 2SK2828 , NTMFS4921N , NTMFS4923NE , NTMFS4925N .
History: STP12N65M5 | PMV30ENEA
History: STP12N65M5 | PMV30ENEA



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