NTMFS4851N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: NTMFS4851N
Маркировка: 4851N
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2.16 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 16 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 15 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 13.5 nC
Время нарастания (tr): 39.8 ns
Выходная емкость (Cd): 333 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.0059 Ohm
Тип корпуса: SO8FL
Аналог (замена) для NTMFS4851N
NTMFS4851N Datasheet (PDF)
ntmfs4851n.pdf
NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free Devices*V(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Not
ntmfs4851nt1g.pdf
NTMFS4851NPower MOSFET30 V, 66 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications5.9 mW @ 10 V Refer to Application Note
ntmfs4852nt1g.pdf
NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DevicesV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
ntmfs4854nst1g.pdf
NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
ntmfs4852n.pdf
NTMFS4852NPower MOSFET30 V, 155 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications2.1 mW @ 10 V Refer to Application Note AND8195/D30 V155 A CPU Po
ntmfs4854ns.pdf
NTMFS4854NSSENSEFET Power MOSFET25 V, 149 A, Single N-Channel, SO-8 FLFeatures Accurate, Lossless Current Sensing Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS2.5
Другие MOSFET... NTMFS4833NS , NTMFS4834N , NTMFS4835N , NTMFS4836N , NTMFS4841N , S60N12RN , NTMFS4846N , NTMFS4847N , 5N50 , NTMFS4852N , NTMFS4854NS , S60N12RP , NTMFS4898NF , 2SK2828 , NTMFS4921N , NTMFS4923NE , NTMFS4925N .
