NTMFS4941N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMFS4941N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.56 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 22 nS
Cossⓘ - Capacitancia de salida: 570 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0062 Ohm
Paquete / Cubierta: SO8FL
Búsqueda de reemplazo de NTMFS4941N MOSFET
NTMFS4941N Datasheet (PDF)
ntmfs4941n.pdf

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications 6.2 mW @ 10 V30 V 47 A CPU
ntmfs4941nt1g.pdf

NTMFS4941NPower MOSFET30 V, 47 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications6.2 mW @ 10 V30 V 47 A CP
ntmfs4943nt1g.pdf

NTMFS4943NPower MOSFET30 V, 41 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications7.2 mW @ 10 V CPU Power Deli
ntmfs4946n.pdf

NTMFS4946NPower MOSFET30 V, 100 A, Single N-Channel, SO-8 FLFeatures Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Thermally Enhanced SO8 Package These are Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications3.4 mW @ 10 V CPU Power Delivery30 V
Otros transistores... NTMFS4926N , NTMFS4927N , NTMFS4933N , NTMFS4934N , NTMFS4935N , NTMFS4936N , NTMFS4937N , NTMFS4939N , IRFZ44N , NTMFS4943N , NTMFS5830NL , NTMFS5832NL , NTMFS5834NL , NTMFS5844NL , TK2R9E10PL , NTMS4176P , NTMS4177P .
History: CEF85N75 | STN1012



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSH0805PK | JMSH0805PG | JMSH0805PE | JMSH0805PC | JMSH0804NK | JMSH0804NG | JMSH0804NE | JMSH0804NC | JMSH0803PC | JMSH0803NGS | JMSH0803MTL | JMSH0803MG | JMSH0803ME | JMSH0803MC | JMSH0803AGS | JBE084M
Popular searches
tip127 datasheet | irlz24n | irf620 | irfp350 | 13003 transistor | c458 transistor | 2sc1775 | 2n1305