NTMS4801N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMS4801N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.41 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9.9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.7 nS
Cossⓘ - Capacitancia de salida: 288 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET NTMS4801N
NTMS4801N Datasheet (PDF)
ntms4801n.pdf
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4801nr2g.pdf
NTMS4801NPower MOSFET30 V, 12 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications9.0 mW @ 10 V30 V 12 A DC-DC Converters12.5 mW @ 4.5 V Synchronous MOSFET
ntms4807n-d ntms4807nr2g.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
ntms4802n ntms4802nr2g.pdf
NTMS4802NPower MOSFET30 V, 18 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications4.0 mW @ 10 V30 V 18 A DC-DC Converters5.5 mW @ 4.5 V Synchronous MOSFET
ntms4800n.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4800nr2g.pdf
NTMS4800NPower MOSFET30 V, 8 A, N-Channel, SOIC-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losseshttp://onsemi.com Optimized Gate Charge to Minimize Switching Losses SOIC-8 Surface Mount Package Saves Board SpaceV(BR)DSS RDS(ON) MAX ID MAX This is a Pb-Free Device20 mW @ 10 VApplications30 V 8 A27 mW @ 4.5 V
ntms4807n.pdf
NTMS4807NPower MOSFET30 V, 14.8 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com This is a Pb-Free DeviceV(BR)DSS RDS(ON) MAX ID MAXApplications6.1 mW @ 10 V Disk Drives30 V 14.8 A DC-DC Converters 7.5 mW @ 4.5 V Pri
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918