NTMS4916N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMS4916N
Código: 4916N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 1.3 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 9.4 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
Carga de la puerta (Qg): 28 nC
Tiempo de subida (tr): 7.4 nS
Conductancia de drenaje-sustrato (Cd): 401 pF
Resistencia entre drenaje y fuente RDS(on): 0.009 Ohm
Paquete / Cubierta: SO8
Búsqueda de reemplazo de MOSFET NTMS4916N
NTMS4916N Datasheet (PDF)
ntms4916n.pdf
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NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4916nr2g.pdf
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NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA
ntms4917n.pdf
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NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
ntms4917nr2g.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V
Otros transistores... NTMS4177P , NTMS4503N , NTMS4800N , NTMS4801N , NTMS4802N , NTMS4807N , NTMS4816N , NTMS4873NF , IRFP260N , NTMS4917N , NTMS4920N , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , NTMS7N03R2 .
![NTMS4916N](https://alltransistors.com/images/us.png)
![NTMS4916N](https://alltransistors.com/images/es.png)
![NTMS4916N](https://alltransistors.com/images/ru.png)
Liste
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