NTMS4916N PDF and Equivalents Search

 

NTMS4916N Specs and Replacement

Type Designator: NTMS4916N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 401 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: SO8

NTMS4916N substitution

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NTMS4916N datasheet

 ..1. Size:136K  onsemi
 ntms4916n.pdf pdf_icon

NTMS4916N

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A... See More ⇒

 0.1. Size:109K  onsemi
 ntms4916nr2g.pdf pdf_icon

NTMS4916N

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A... See More ⇒

 7.1. Size:114K  onsemi
 ntms4917n.pdf pdf_icon

NTMS4916N

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V ... See More ⇒

 7.2. Size:103K  onsemi
 ntms4917nr2g.pdf pdf_icon

NTMS4916N

NTMS4917N Power MOSFET 30 V, 10.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 11 mW @ 10 V ... See More ⇒

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Detailed specifications: NTMS4177P, NTMS4503N, NTMS4800N, NTMS4801N, NTMS4802N, NTMS4807N, NTMS4816N, NTMS4873NF, AO3400, NTMS4917N, NTMS4920N, NTMS4937N, NTMS4939N, NTMS5835NL, NTMS5838NL, NTMS5P02, NTMS7N03R2

Keywords - NTMS4916N MOSFET specs

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