NTMS4920N Todos los transistores

 

NTMS4920N MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTMS4920N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.46 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 14.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.7 nS

Cossⓘ - Capacitancia de salida: 1170 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0043 Ohm

Encapsulados: SO8

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NTMS4920N datasheet

 ..1. Size:131K  onsemi
ntms4920n.pdf pdf_icon

NTMS4920N

NTMS4920N Power MOSFET 30 V, 17 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 4.3 mW @ 10 V 30 V 1

 8.1. Size:136K  onsemi
ntms4916n.pdf pdf_icon

NTMS4920N

NTMS4916N Power MOSFET 30 V, 11.6 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX ID MAX Compliant 9 mW @ 10 V A

 8.2. Size:197K  onsemi
ntms4939n.pdf pdf_icon

NTMS4920N

NTMS4939N MOSFET Power, N-Channel, SO-8 30 V, 12.5 A Features Low RDS(on) to Minimize Conduction Losses http //onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 8.4 mW @ 10 V 30 V 12.5 A Applications 11 mW @

 8.3. Size:132K  onsemi
ntms4939nr2g.pdf pdf_icon

NTMS4920N

NTMS4939N Power MOSFET 30 V, 12.5 A, N-Channel, SO-8 Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses http //onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX Applications DC-DC Converters 8.4 mW @ 10 V 30 V

Otros transistores... NTMS4800N , NTMS4801N , NTMS4802N , NTMS4807N , NTMS4816N , NTMS4873NF , NTMS4916N , NTMS4917N , IRF3710 , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , NTMS7N03R2 , NTNUS3171PZ , NTP2955 .

History: MDIS1903TH | BSH121 | BLF7G22L-100P

 

 

 


History: MDIS1903TH | BSH121 | BLF7G22L-100P

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