NTMS4920N - параметры транзистора MOSFET, его аналоги, datasheet

NTMS4920N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

   Наименование прибора: NTMS4920N
   Маркировка: 4920N
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 1.46 W
   Предельно допустимое напряжение сток-исток |Uds|: 30 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3 V
   Максимально допустимый постоянный ток стока |Id|: 14.1 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 58.9 nC
   Время нарастания (tr): 4.7 ns
   Выходная емкость (Cd): 1170 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.0043 Ohm
   Тип корпуса: SO8

Аналог (замена) для NTMS4920N

NTMS4920N Datasheet (PDF)

..1. Size:131K onsemi
ntms4920n.pdf

NTMS4920NPower MOSFET30 V, 17 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters4.3 mW @ 10 V30 V 1

8.1. Size:136K onsemi
ntms4916n.pdf

NTMS4916NPower MOSFET30 V, 11.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant9 mW @ 10 VA

8.2. Size:197K onsemi
ntms4939n.pdf

NTMS4939NMOSFET Power,N-Channel, SO-830 V, 12.5 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.4 mW @ 10 V30 V 12.5 AApplications11 mW @

8.3. Size:132K onsemi
ntms4939nr2g.pdf

NTMS4939NPower MOSFET30 V, 12.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters8.4 mW @ 10 V30 V

8.4. Size:133K onsemi
ntms4937nr2g.pdf

NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V

8.5. Size:109K onsemi
ntms4916nr2g.pdf

8.6. Size:114K onsemi
ntms4917n.pdf

NTMS4917NPower MOSFET30 V, 10.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com Optimized for 5 V, 12 V Gate Drives These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSV(BR)DSS RDS(ON) MAX ID MAXCompliant11 mW @ 10 V

8.7. Size:103K onsemi
ntms4917nr2g.pdf