NTMS4937N Todos los transistores

 

NTMS4937N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NTMS4937N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3.6 nS
   Cossⓘ - Capacitancia de salida: 715 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: SO8
 

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NTMS4937N Datasheet (PDF)

 ..1. Size:133K  onsemi
 ntms4937n.pdf pdf_icon

NTMS4937N

NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V

 0.1. Size:133K  onsemi
 ntms4937nr2g.pdf pdf_icon

NTMS4937N

NTMS4937NPower MOSFET30 V, 13.6 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters6.5 mW @ 10 V30 V

 7.1. Size:197K  onsemi
 ntms4939n.pdf pdf_icon

NTMS4937N

NTMS4939NMOSFET Power,N-Channel, SO-830 V, 12.5 AFeatures Low RDS(on) to Minimize Conduction Losseshttp://onsemi.com Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching LossesV(BR)DSS RDS(ON) MAX ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant8.4 mW @ 10 V30 V 12.5 AApplications11 mW @

 7.2. Size:132K  onsemi
 ntms4939nr2g.pdf pdf_icon

NTMS4937N

NTMS4939NPower MOSFET30 V, 12.5 A, N-Channel, SO-8Features Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losseshttp://onsemi.com These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXApplications DC-DC Converters8.4 mW @ 10 V30 V

MOSTRAR MÁS

Otros transistores... NTMS4801N , NTMS4802N , NTMS4807N , NTMS4816N , NTMS4873NF , NTMS4916N , NTMS4917N , NTMS4920N , 7N65 , NTMS4939N , NTMS5835NL , NTMS5838NL , NTMS5P02 , NTMS7N03R2 , NTNUS3171PZ , NTP2955 , NTP5404N .

History: FHF4N65B | IPP024N06N3 | UT3N06G-AE3 | CS6N60A3D | NTMS4873NF | NTP5404N

 

 
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