NTMS5P02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NTMS5P02
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 4.85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 510 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Encapsulados: SOIC8
Búsqueda de reemplazo de NTMS5P02 MOSFET
- Selecciónⓘ de transistores por parámetros
NTMS5P02 datasheet
ntms5p02 nvms5p02.pdf
NTMS5P02, NVMS5P02 MOSFET Power, Single, P-Channel, Enhancement Mode, SOIC-8 -5.4 A, -20 V http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi
ntms5p02r2 ntms5p02r2g ntms5p02r2sg.pdf
NTMS5P02R2 Power MOSFET -5.4 Amps, -20 Volts P-Channel Enhancement-Mode Single SOIC-8 Package http //onsemi.com Features VDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on) Providing Higher Efficiency -20 V 26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifie
ntms5838nlr2g.pdf
NTMS5838NL Power MOSFET 40 V, 7.5 A, 20 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 20 mW @ 10 V 40 V 7.5 A Parameter Symbol Value Unit 36.5 mW @ 4.5 V Drain-to-Source Voltage
ntms5835nlr2g.pdf
NTMS5835NL Power MOSFET 40 V, 12 A, 10 mW Features Low RDS(on) Low Capacitance http //onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V(BR)DSS RDS(ON) MAX ID MAX MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) 10 mW @ 10 V 40 V 12 A Parameter Symbol Value Unit 14 mW @ 4.5 V Drain-to-Source Voltage VDSS
Otros transistores... NTMS4873NF , NTMS4916N , NTMS4917N , NTMS4920N , NTMS4937N , NTMS4939N , NTMS5835NL , NTMS5838NL , P55NF06 , NTMS7N03R2 , NTNUS3171PZ , NTP2955 , NTP5404N , NTP5863N , NTP5864N , NTP6410AN , NTP6411AN .
History: BSH121 | MDIS1903TH | BSH114
History: BSH121 | MDIS1903TH | BSH114
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