Справочник MOSFET. NTMS5P02

 

NTMS5P02 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: NTMS5P02
   Маркировка: E5P02*
   Тип транзистора: MOSFET
   Полярность: P
   Максимальная рассеиваемая мощность (Pd): 1.2 W
   Предельно допустимое напряжение сток-исток |Uds|: 20 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 10 V
   Пороговое напряжение включения |Ugs(th)|: 1.25 V
   Максимально допустимый постоянный ток стока |Id|: 4.85 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 20 nC
   Время нарастания (tr): 25 ns
   Выходная емкость (Cd): 510 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.033 Ohm
   Тип корпуса: SOIC8

 Аналог (замена) для NTMS5P02

 

 

NTMS5P02 Datasheet (PDF)

 ..1. Size:134K  onsemi
 ntms5p02 nvms5p02.pdf

NTMS5P02 NTMS5P02

NTMS5P02, NVMS5P02MOSFET Power, Single,P-Channel, EnhancementMode, SOIC-8-5.4 A, -20 Vhttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifi

 0.1. Size:121K  onsemi
 ntms5p02r2 ntms5p02r2g ntms5p02r2sg.pdf

NTMS5P02 NTMS5P02

NTMS5P02R2Power MOSFET-5.4 Amps, -20 VoltsP-Channel Enhancement-ModeSingle SOIC-8 Packagehttp://onsemi.comFeaturesVDSS RDS(ON) TYP ID MAX High Density Power MOSFET with Ultra Low RDS(on)Providing Higher Efficiency-20 V26 mW @ -4.5 V -5.4 A Miniature SOIC-8 Surface Mount Package - Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specifie

 9.1. Size:105K  onsemi
 ntms5838nlr2g.pdf

NTMS5P02 NTMS5P02

NTMS5838NLPower MOSFET40 V, 7.5 A, 20 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)20 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit36.5 mW @ 4.5 VDrain-to-Source Voltage

 9.2. Size:105K  onsemi
 ntms5835nlr2g.pdf

NTMS5P02 NTMS5P02

NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS

 9.3. Size:116K  onsemi
 ntms5835nl.pdf

NTMS5P02 NTMS5P02

NTMS5835NLPower MOSFET40 V, 12 A, 10 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)10 mW @ 10 V40 V 12 AParameter Symbol Value Unit14 mW @ 4.5 VDrain-to-Source Voltage VDSS

 9.4. Size:115K  onsemi
 ntms5838nl.pdf

NTMS5P02 NTMS5P02

NTMS5838NLPower MOSFET40 V, 7.5 A, 25 mWFeatures Low RDS(on) Low Capacitancehttp://onsemi.com Optimized Gate Charge These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliantV(BR)DSS RDS(ON) MAX ID MAXMAXIMUM RATINGS (TJ = 25C unless otherwise stated)25 mW @ 10 V40 V 7.5 AParameter Symbol Value Unit30.8 mW @ 4.5 VDrain-to-Source Voltage

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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