NTP5863N MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

NTP5863N datasheet

0.1. Size:100K onsemi
ntp5863ng.pdf pdf_icon

NTP5863N N-Channel Power MOSFET 60 V, 97 A, 7.8 mW Features Low RDS(on) High Current Capability http //onsemi.com 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant V(BR)DSS RDS(on) MAX ID MAX 60 V 7.8 mW @ 10 V 97 A MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified) Parameter Symbol Value Unit D Drain-to-Source Voltage VDSS 6

8.1. Size:101K onsemi
ntp5864ng.pdf pdf_icon

NTP5864N Power MOSFET 60 V, 63 A, 12.4 mW Features Low RDS(on) High Current Capability http //onsemi.com Avalanche Energy Specified ID MAX These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS V(BR)DSS RDS(ON) MAX (Note 1) Compliant 60 V 12.4 m @ 10 V 63 A MAXIMUM RATINGS (TJ = 25 C unless otherwise stated) N-Channel Parameter Symbol Value Units D Dra

8.2. Size:137K onsemi
ntd5862n ntp5862n.pdf pdf_icon

NTD5862N, NTP5862N MOSFET Power, N-Channel 60 V, 98 A, 5.7 mW Features www.onsemi.com Low RDS(on) V(BR)DSS RDS(on) MAX ID MAX High Current Capability 60 V 5.7 mW @ 10 V 98 A 100% Avalanche Tested These Devices are Pb-Free, Halogen Free and are RoHS Compliant D MAXIMUM RATINGS (TJ = 25 C unless otherwise noted) N-Channel Parameter Symbol Value Unit G Drain-t

8.3. Size:113K onsemi
ntb5860n ntp5860n nvb5860n.pdf pdf_icon

NTB5860N, NTP5860N, NVB5860N N-Channel Power MOSFET 60 V, 220 A, 3.0 mW Features http //onsemi.com Low RDS(on) High Current Capability V(BR)DSS RDS(on) MAX ID MAX 100% Avalanche Tested 60 V 3.0 mW @ 10 V 220 A These Devices are Pb-Free, Halogen Free and are RoHS Compliant NVB Prefix for Automotive and Other Applications Requiring D Unique Site and Control Change