2SK974L Todos los transistores

 

2SK974L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK974L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: DPAK
     - Selección de transistores por parámetros

 

2SK974L Datasheet (PDF)

 ..1. Size:46K  1
2sk974l 2sk974s.pdf pdf_icon

2SK974L

2SK974 L , 2SK974 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4

 ..2. Size:205K  inchange semiconductor
2sk974l.pdf pdf_icon

2SK974L

isc N-Channel MOSFET Transistor 2SK974LFEATURESWith TO-251(IPAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra

 8.1. Size:200K  inchange semiconductor
2sk974s.pdf pdf_icon

2SK974L

isc N-Channel MOSFET Transistor 2SK974SFEATURESWith TO-252 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

 9.1. Size:46K  1
2sk973l 2sk973s.pdf pdf_icon

2SK974L

2SK973 L , 2SK973 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4

Otros transistores... 2SK962 , 2SK962-01 , 2SK963 , 2SK970 , 2SK971 , 2SK972 , 2SK973L , 2SK973S , 8205A , 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , 2SK985 , 2SK987 , 2SK988 .

History: RFL1N10L | STP55N06L | BUZ358 | STP33N65M2 | AUIRF2804 | SH8K12

 

 
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