2SK974L Todos los transistores

 ..1. Size:46K  1
 2sk974l 2sk974s.pdf

2SK974 L , 2SK974 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 12 Low on-resistance 3 2, 4 High speed switching S type L type Low drive current 4 V gate drive device Can be driven from 5 V source 1. Gate 1 Suitable for motor drive, DC-DC converter, 2. Drain 3. Source power switch and solenoid drive 4

 ..2. Size:205K  inchange semiconductor
 2sk974l.pdf

isc N-Channel MOSFET Transistor 2SK974L FEATURES With TO-251(IPAK) packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Dra

 8.1. Size:200K  inchange semiconductor
 2sk974s.pdf

isc N-Channel MOSFET Transistor 2SK974S FEATURES With TO-252 packaging High speed switching Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Sou

 9.1. Size:46K  1
 2sk973l 2sk973s.pdf

2SK973 L , 2SK973 S Silicon N-Channel MOS FET Application 4 DPAK-1 High speed power switching 4 Features 12 3 12 Low on-resistance 3 2, 4 High speed switching S type L type Low drive current 4 V gate drive device Can be driven from 5 V source 1. Gate 1 Suitable for motor drive, DC-DC converter, 2. Drain 3. Source power switch and solenoid drive 4

 9.2. Size:44K  1
 2sk972.pdf

2SK972 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum R

 9.3. Size:43K  1
 2sk971.pdf

2SK971 Silicon N-Channel MOS FET Application TO 220AB High speed power switching Features Low on-resistance 2 High speed switching 1 2 3 Low drive current 4 V gate drive device 1. Gate Can be driven from 5 V source 1 2. Drain Suitable for motor drive, DC-DC converter, (Flange) power switch and solenoid drive 3. Source 3 Table 1 Absolute Maximum Ra

 9.4. Size:244K  1
 2sk970.pdf

 9.5. Size:109K  renesas
 r07ds0434ej 2sk975.pdf

Preliminary Datasheet R07DS0434EJ0300 2SK975 (Previous REJ03G0905-0200) Rev.3.00 Silicon N Channel MOS FET Jun 07, 2011 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid

 9.6. Size:75K  renesas
 2sk975.pdf

2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES

 9.7. Size:125K  no
 2sk979.pdf

www.DataSheet4U.com

 9.8. Size:286K  inchange semiconductor
 2sk973s.pdf

isc N-Channel MOSFET Transistor 2SK973S FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 9.9. Size:287K  inchange semiconductor
 2sk972.pdf

isc N-Channel MOSFET Transistor 2SK972 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.10. Size:288K  inchange semiconductor
 2sk971.pdf

isc N-Channel MOSFET Transistor 2SK971 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 9.11. Size:354K  inchange semiconductor
 2sk973l.pdf

isc N-Channel MOSFET Transistor 2SK973L FEATURES Drain Current I = 2.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 350m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno