2SK974L MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK974L
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 20 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(off)|ⓘ - Минимальное напряжение отсечки: 1 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 230 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
Тип корпуса: DPAK
2SK974L Datasheet (PDF)
2sk974l 2sk974s.pdf
2SK974 L , 2SK974 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4
2sk974l.pdf
isc N-Channel MOSFET Transistor 2SK974LFEATURESWith TO-251(IPAK) packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Dra
2sk974s.pdf
isc N-Channel MOSFET Transistor 2SK974SFEATURESWith TO-252 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou
2sk973l 2sk973s.pdf
2SK973 L , 2SK973 SSilicon N-Channel MOS FETApplication4DPAK-1High speed power switching4Features12312 Low on-resistance32, 4 High speed switchingS type L type Low drive current 4 V gate drive device Can be driven from 5 V source1. Gate1 Suitable for motor drive, DC-DC converter,2. Drain3. Sourcepower switch and solenoid drive4
2sk972.pdf
2SK972Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum R
2sk971.pdf
2SK971Silicon N-Channel MOS FETApplicationTO220ABHigh speed power switchingFeatures Low on-resistance2 High speed switching 123 Low drive current 4 V gate drive device1. Gate Can be driven from 5 V source12. Drain Suitable for motor drive, DC-DC converter,(Flange)power switch and solenoid drive3. Source3Table 1 Absolute Maximum Ra
r07ds0434ej 2sk975.pdf
Preliminary Datasheet R07DS0434EJ03002SK975 (Previous: REJ03G0905-0200)Rev.3.00Silicon N Channel MOS FET Jun 07, 2011Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid
2sk975.pdf
2SK975 Silicon N Channel MOS FET REJ03G0905-0200 (Previous: ADE-208-1243) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENES
2sk973s.pdf
isc N-Channel MOSFET Transistor 2SK973SFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk972.pdf
isc N-Channel MOSFET Transistor 2SK972FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk971.pdf
isc N-Channel MOSFET Transistor 2SK971FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk973l.pdf
isc N-Channel MOSFET Transistor 2SK973LFEATURESDrain Current : I = 2.0A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 350m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
Другие MOSFET... 2SK962 , 2SK962-01 , 2SK963 , 2SK970 , 2SK971 , 2SK972 , 2SK973L , 2SK973S , IRF9640 , 2SK974S , 2SK975 , 2SK979 , 2SK981 , 2SK981A , 2SK985 , 2SK987 , 2SK988 .
Список транзисторов
Обновления
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