FDB075N15AF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDB075N15AF085
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 333 W
Voltaje máximo drenador - fuente |Vds|: 150 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 110 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 80 nC
Tiempo de subida (tr): 46 nS
Conductancia de drenaje-sustrato (Cd): 513 pF
Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
Paquete / Cubierta: TO263 D2PAK
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FDB075N15AF085 Datasheet (PDF)
fdb075n15a f085.pdf
October 2013FDB075N15A_F085N-Channel Power Trench MOSFET150V, 110A, 7.5m DDFeatures Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta
fdp075n15a f102 fdb075n15a.pdf
October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc
fdp075n15a fdb075n15a.pdf
December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges
fdp075n15a fdb075n15a.pdf
March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge
fdb075n15a-f085.pdf
FDB075N15A-F085N-Channel Power Trench MOSFET DD150V, 110A, 7.5mFeaturesG Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80A GS UIS CapabilityTO-263S RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator
fdb075n15a.pdf
Isc N-Channel MOSFET Transistor FDB075N15AFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
