All MOSFET. FDB075N15AF085 Datasheet

 

FDB075N15AF085 Datasheet and Replacement


   Type Designator: FDB075N15AF085
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 513 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO263 D2PAK
 

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FDB075N15AF085 Datasheet (PDF)

 4.1. Size:362K  fairchild semi
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FDB075N15AF085

October 2013FDB075N15A_F085N-Channel Power Trench MOSFET150V, 110A, 7.5m DDFeatures Typ rDS(on) = 5.5m at VGS = 10V, ID = 80A Typ Qg(tot) = 80nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Sta

 4.2. Size:312K  fairchild semi
fdp075n15a f102 fdb075n15a.pdf pdf_icon

FDB075N15AF085

October 2012FDP075N15A_F102 / FDB075N15AN-Channel PowerTrench MOSFET 150V, 130A, 7.5mFeatures Description RDS(on) = 6.25m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Fast Switching been especially tailored to minimize the on-state resistance and yet maintain superior switc

 4.3. Size:698K  fairchild semi
fdp075n15a fdb075n15a.pdf pdf_icon

FDB075N15AF085

December 2013FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charges

 4.4. Size:821K  onsemi
fdp075n15a fdb075n15a.pdf pdf_icon

FDB075N15AF085

March 2015FDP075N15A / FDB075N15AN-Channel PowerTrench MOSFET150 V, 130 A, 7.5 mFeatures Description RDS(on) = 6.25 m (Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switchinglored to minimize the on-state resistance while maintaining Low Gate Charge

Datasheet: NTUD3127C , NTUD3169CZ , NTUD3170NZ , NTZD3152P , NTZD3154N , NTZD3155C , NTZD5110N , NTZS3151P , AON6380 , NUS3116MT , NUS5530MN , NUS5531MT , NVD5803N , NVD5862N , NVD5863NL , NVD5865NL , NVD5867NL .

History: 2SK1606 | MCAC50N06Y | AP4433GI-HF | FQD5N20L | 2SJ680 | JBE112T | BF244C

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